Method for applying a resist layer, uses of adhesive materials, and adhesive materials and resist layer

ABSTRACT

A method in which a resist layer is applied to a base layer is disclosed. The resist layer includes an adhesive material, and the adhesive force of the adhesive material decreases or increases during an irradiation process. Residues of the resist layer may be stripped using the disclosed method.

PRIORITY AND CROSS REFERENCE TO RELATED APPLICATION

This application is a reissue of U.S. Pat. No. 7,351,514, issued Apr. 1,2008, entitled “METHOD FOR APPLYING A RESIST LAYER, USES OF ADHESIVEMATERIALS, AND ADHESIVE MATERIALS AND RESIST LAYER.”, which is acontinuation of International Application No. PCT/EP2003/014460 filedDec. 18, 2003, which claims priority to German application 102 60 235.2filed Dec. 20, 2002, both all of which are incorporated herein in theirentirety by reference.

BACKGROUND

1. Field of the Invention

The present invention relates to the field of resist layers, and moreparticularly, it relates to a method for applying a resist layer to abase layer, selectively irradiated and developed.

2. Description of the Related Art

Methods have been used in the context of a lithography process forpatterning a base layer after the development of a resist layer and inthe context of a galvanic method in which contact areas are deposited onconnecting pads in the base layer. A photoresist that is spun onto thebase layer in the liquid state has hitherto been used as the resistlayer. After evaporation or baking out of a solvent contained in thephotoresist, the resist cures and is then exposed. During thespinning-on process, fluctuations arise in the thickness of thephotoresist layer produced. Moreover, the removal of residues of thephotoresist layer after the development may be complicated. By way ofexample, it may be necessary to use a solvent whose disposal is costintensive. The spun on resist layers are usually thinner than 30 μm(micrometers). If thicker resist layers are intended to be produced,then the spinning on process is repeated appropriately often after thecuring of a previously applied resist layer.

BRIEF SUMMARY OF THE INVENTION

By way of introduction only, a method for a method for applying a resistlayer to a base layer, selectively irradiated and developed isdescribed.

An exemplary embodiment of the present invention specifies a simplemethod for the application of a resist layer, and uses of adhesivematerials and a resist layer that are used in such a method. The resistlayer is applied, in particular adhesively bonded, to the base layer inthe solid state. The resist layer may be fabricated on a planar supportwith a very uniform layer thickness such as in continuous production.

The resist layer can be fixed to the base layer if, directly before theapplication of the resist layer, an adhesive material is applied to thebase layer and/or to the resist layer, such as by being sprayed on orspread on. Alternatively, in a variant that is cleaner in terms ofproduction technology with regard to adhesive residues, a resist layeris used that is adhesive or is coated with an adhesive layer alreadylong before the application to the base layer.

Many of the materials used in resist layers are suitable as irradiationsensitive materials in the resist layer, such as diazonaphthoquinone ornaphthoquinonediazide in the case of positive resist and partiallycyclized polyisopropene in the case of negative resist. The resist layeradditionally may include a suitable film former, such as phenolic resincompounds. Additives in the resist layer may be, inter alia, stabilizersand/or inhibitors.

An exemplary method enables complete utilization of liquid resistmaterial used during the production of the resist film. Only 10% of theresist liquid is used during the conventional spinning on process andthe remaining 90% cannot be used on account of oxidation processes.

A development is based, at least in part, on the consideration that theselection of the resist layer material and also the exposure of theresist layer should already be performed taking account of the laterstripping operation. The fact that there are adhesives that vary theiradhesive force upon the action of an irradiation may also be considered.By way of example, the irradiation produces polymers or copolymers frommonomers or from oligomers, a crosslinking that occurs in this caseleading to a reduction of the adhesive force. On the other hand,polymers or copolymers can also be split into monomers or oligomers byan irradiation, the adhesive force being increased. Another class ofadhesives contains substances that decompose the adhesive and can beactivated or deactivated by an irradiation. Regions of the resist layeror of the adhesive layer that are crosslinked to different extents arestripped at different speeds by solvents, so that the resist layer canbe developed in a simple manner.

A resist layer that initially has a lower adhesive force may be used forexample for a so called positive resist. During exposure, polymers aresplit up, as a result of which although the adhesive force rises in theexposed region, these regions can be removed more easily by a solventthan the unexposed regions.

A material having an originally high adhesive force may be used in thecase of a negative resist. The exposed regions are crosslinked, forexample, during exposure, so that the adhesive force is reduced in theseregions. During development, only the unexposed regions are removed,i.e. the regions that are not yet crosslinked. Therefore, in onedevelopment, use is made of a resist layer made of an adhesive whoseadhesive force decreases or increases during the irradiation. Thisresults in a simple method in which regions which remain on the baselayer after the development can be removed in a simple manner. Onaccount of the originally low adhesive force or the adhesive force thatis reduced during the irradiation, these regions can be removed in asimple manner for example by using a stripping adhesive tape, inparticular without the use of additional solvents or with a reducedsolvent quantity.

In another development which relates to negative resists, the adhesiveforce decreases during an irradiation by more than 30% or by more than50% or by more than 90% relative to the original adhesive force at thebase layer. Fabrication specifications relate, for example, to theadhesive force at silicon wafers or at polyimide wafers. The originaladhesive force at silicon is, for example, greater than 1 N/20 mm oreven greater than 10 N/20 mm. After exposure, the adhesive forcedecreases e.g. to 0.16 N/20 mm. In particular, substances in the case ofwhich the adhesive force decreases by more than 90% can also befabricated in a simple manner. The adhesive force may increase by morethan 50% or by more than 100%. Such substances can also be fabricated ina simple manner and are suitable in particular for positive resists.

In another development, the resist layer is irradiated or exposed withan electromagnetic radiation, preferably with an ultraviolet radiationor an X ray radiation. It is also possible to use particle beams, forexample electron beams or ion beams for irradiation. The radiationserves for altering the adhesive force, by specific chemical alterationsbeing brought about by the radiation, for example a polymerization or asplitting of polymers.

In another development, regions of the resist layer that remain on thelayer to be patterned after the development have a reduced adhesiveforce in comparison with the non-irradiated resist layer. The reducedadhesive force facilitates the later removal of the residual regions. Ifa contiguous region is involved, the residual resist layer can bestripped in a simple manner such as with the use of pincers.

In another development, the residual regions may be stripped with anadhesive area whose adhesive force is greater than the reduced adhesiveforce of the resist layer, preferably with an adhesive tape or anadhesive sheet. An adhesive tape or an adhesive sheet makes it possiblefor the stripping angle to be chosen freely within wide ranges and, ifappropriate, also to be altered during the stripping process. Theresidual regions may be removed with a solvent. Removal with a solventis simpler than heretofore because the adhesive force of the residualregions is greatly reduced, in particular in comparison withphotoresists that are cured at the base layer.

In a next development of the method according to the invention, anorganic solvent, in particular N methylpyrrolidone or dimethylsulfoxide, is used as developer. The structural formula for dimethylsulfoxide is H₃C SO CH₃. The developers mentioned may be used in thedevelopment of photoresist.

The resist layer may also be applied with an adhesive area whoseadhesive force is less than the adhesive force of the nonirradiatedlayer at the base layer. In one refinement, an adhesive tape or anadhesive sheet is used. Such an application of the resist layer may becarried out without adhesive residues arising at the machines or toolsused for the application. As an alternative, by way of example, theresist layer can also be applied to the base layer by a method similarto screen printing.

In another development, use is made of a resist with an antireflectionlayer, making it possible to reduce the minimum feature sizes during thepatterning of the resist layer, and thus, for example, also during thepatterning of the base layer. Although the exemplary method is also usedto produce structures with minimum dimensions of greater than 5 or 10μm, the method may also be used if the minimum feature size is in theregion of 1 μm or less.

The resist layer may have a thickness of greater than 30 μm, greaterthan 50 μm or even greater than 100 μm. Such a thick resist layer may beapplied in an application operation. When using photoresist, a pluralityof application operations may be used, i.e. alternately spinning on,curing, spinning off, etc. The method for the application of the resistlayer is thus substantially simplified by the development.

In another development, the base layer is patterned in accordance withthe regions of the resist layer which remain after the development,preferably in a dry etching process or in a wet chemical etchingprocess. As an alternative, material is applied between the remainingregions of the resist layer on the base layer, preferably by a galvanic,by a chemical or chemical physical deposition, for example with the aidof a sputtering method.

In a further aspect, the invention additionally relates to the use of anadhesive agent whose adhesive force changes during an irradiation, forthe selective patterning of a layer or for the selective application ofmaterial to a layer. The use of an adhesive tape or an adhesive sheetwith such an adhesive agent for the selective patterning of a layer orfor the selective application of material to a layer is additionallyprotected.

A further aspect protects the use of an adhesive tape or an adhesivesheet for the removal of residues of a resist layer, in particular of aresist layer which has been patterned according to the method accordingto the invention or one of its developments.

The invention additionally relates to an adhesive tape or an adhesivesheet that includes an adhesive layer whose adhesive force changesduring an irradiation. Moreover, the adhesive tape or the adhesive sheetcontains an outer layer on one side of the adhesive layer, which outerlayer can be removed from the adhesive layer with a low expenditure offorce in comparison with the adhesive force of the adhesive layer at thebase layer. By way of example, the adhesion force is less than 0.5 N/20mm (Newton per 20 millimeters). This means that a force of 0.5 Newton isrequired for stripping the outer layer from an adhesive layer having awidth of 20 mm. Thus, the required force amounts to, for example, only50% or even only 10% of the adhesive force with which the adhesive layeradheres to the base layer. A further outer layer is arranged on theother side of the adhesive layer, and can likewise be stripped with asmall force. Such an adhesive tape is suitable for the simpleapplication of the adhesive layer to the base layer. Thus, firstly oneouter layer is removed. Afterward, the adhesive tape or the adhesivesheet is adhesively bonded to the base layer and the other outer layeris then removed. The method according to the invention or one of itsdevelopments is subsequently carried out.

In another development, the further outer layer is formed by an outerlayer of another section of the same outer layer of a rolled up adhesivetape or by an outer side of another adhesive sheet of an adhesive sheetstack having at least two adhesive sheets. As a result, the outer layersmay be utilized multiply, namely for covering in each case two adhesivelayers or in each case two sections of an adhesive layer.

The invention additionally relates to an adhesive tape or an adhesivesheet that includes an adhesive layer whose adhesive force changesduring an irradiation. The adhesive tape or adhesive sheet contains atleast one antireflection layer, which prevents or reduces a reflectionof the radiation. The use of an antireflection layer makes it possibleto reduce the minimum feature sizes during the patterning of theadhesive layer.

In another development, the antireflection layer is arranged in thecenter of the adhesive layer or at the edge of the adhesive layer. Theantireflection layer has, by way of example, a different refractiveindex than the rest of the adhesive layer. As an alternative or inaddition, the absorption coefficient for the radiation is greater in theantireflection layer than in the adhesive layer.

The adhesive materials mentioned are used, in particular, in the methodaccording to the invention or one of its developments.

BRIEF DESCRIPTION OF THE DRAWINGS

Exemplary embodiments of the invention are explained below withreference to the accompanying drawings, in which:

FIG. 1 shows an adhesive tape;

FIGS. 2A and 2B show a patterning of a resist layer on an integratedcircuit arrangement and a galvanic deposition; and

FIGS. 3A, 3B and 3C show a patterning of a resist layer on an integratedcircuit arrangement and the subsequent patterning of a layer.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

A method for applying a resist layer to a base layer, selectivelyirradiated and developed will now be described more fully with referenceto the accompanying drawings. In each of the following figures,components, features and integral parts that correspond to one anothereach have the same reference number. The drawings of the figures are nottrue to scale.

FIG. 1 shows an adhesive tape 10 having an adhesive layer 12 and anouter layer 14. The adhesive layer 12 includes a substance with anadhesive force that may be reduced by irradiation with ultravioletlight. During the fabrication of the adhesive tape 10, the adhesiveforce of the adhesive layer 12 on a silicon wafer is 2.0 N/20 mm, forexample. The thickness of the adhesive layer 12 is 50 μm in theexemplary embodiment. One example of the composition of the adhesivelayer 12 will be explained in more detail further below.

The outer layer 14 is composed, for example, of PET or PETP(polyethylene terephthalate), i.e. of polyethylene, or of anothersuitable plastic. The outer layer 14 can be stripped easily from theadhesive layer 12. The adhesive tape 10 is rolled up on a roll, so thatthe outer layer 14 encloses the adhesive layer 12 from both sides.

In another exemplary embodiment, the adhesive tape 10 also includes, inaddition to the adhesive layer 12 and the outer layer 14, anantireflection layer 16 having a similar composition to the adhesivelayer 12. The antireflection layer 16 also includes particles thatincrease the absorption of ultraviolet radiation in the antireflectionlayer 16.

FIG. 2A shows an integrated circuit arrangement 20 having integratedcomponents (not illustrated) e.g. transistors. The integrated circuitarrangement 20 also includes an oxide layer 22, such as a silicondioxide layer. Situated in the oxide layer 22 is a metallization layer24 that includes multiple copper interconnects, of which two copperinterconnects 26 and 28 are illustrated in FIG. 2A. Barrier layers arenot depicted in FIG. 2A for the sake of clarity of the illustration.

After a chemical mechanical polishing (CMP) and a cleaning method areperformed, the adhesive tape 10 is adhesively bonded to the integratedcircuit arrangement 10. The outer layer 14 is subsequently stripped, forexample, manually with pincers or with a stripping adhesive tape and astripping machine.

A selective exposure is then carried out using a photomask. Arrows 30symbolize an impinging ultraviolet light. The exposure results inexposed regions 32 to 36 in the adhesive layer 12. The exposed regions32 to 36 lie above the interspaces between the copper interconnects 26and 28 and delimit unexposed regions 38, 40 lying above the copperinterconnect 26 or 28, respectively. In the exposed region 32 to 36,strongly crosslinked polymers form as a result of the exposure. Thepolymers reduce the adhesive force of the adhesive layer 12 in theexposed regions 32 to 36. In the unexposed regions 38 and 40,comparatively weakly crosslinked or short polymers are present, so thatthe adhesive force remains high without any change.

As illustrated in FIG. 2B, a development operation is subsequentlyformed with the aid of a solvent which strips the regions that arecrosslinked to a lesser extent, i.e. the unexposed regions 38 and 40, toa greater extent than the exposed regions 32 to 36. Therefore, duringdevelopment, the unexposed regions 36 and 40 of the adhesive layer 12are removed, so that cutouts 50 and 52 are produced in their place. Thebottoms of the cutouts 50 and 52 reach as far as the copper interconnect26 and 28, respectively. Copper contacts 54 and 56 are deposited in thecutout 50 and in the cutout 52, respectively. The copper contacts 54 and56 may be deposited using a galvanic method, such as a galvanic methodusing external current, or a galvanic method free of external current.

In another exemplary embodiment, an adhesive agent 12 that works as apositive resist is used. In this case, the adhesive agent 12 originallyhas a low adhesive force. During the exposure, the regions 38 and 40 areexposed. In these regions, polymers are split up as a result of theexposure. At the same time, the adhesive force increases in theseregions. During development, the regions 38 and 40 are again removed andthe further method is also as explained above with reference to FIG. 2B.

In the methods explained with reference to FIGS. 2A and 2B, after theelectrodeposition, a stripping adhesive tape is applied to the adhesivelayer 12 and subsequently stripped away. During the stripping awayprocess, the residual regions 32 to 36 remain attached to the strippingadhesive tape and are removed from the integrated circuit arrangement20.

As illustrated in FIG. 3A, the adhesive tape 10 can also be used forpatterning a layer. An integrated circuit arrangement 100 contains anoxide layer 102, such as a silicon dioxide layer or a BPSG layer(borophosphosilicate glass). A metal layer 104 to be patterned issituated on the oxide layer 102, where the metal layer includes analuminum or an aluminum alloy in small amounts of less than 5% by weightin the exemplary embodiment.

The adhesive tape 10 is adhesively bonded to the metal layer 104. Theouter layer 14 is subsequently stripped away to leave only the adhesivelayer 12 or the adhesive layer and the antireflection layer 16 on themetal layer 104. The adhesive layer 12 is then selectively exposed withthe aid of a photomask, see arrows 130, resulting in exposed regions 132to 136 that delimit unexposed regions 138 and 140. In the exposedregions 132 to 136, the exposure leads to stronger crosslinking and to areduction of the adhesive force of the adhesive layer 12 at the metallayer 104.

As illustrated in FIG. 3B, the adhesive layer 12 is subsequentlydeveloped with the aid of a solvent. This results in cutouts 150 and 152between the exposed regions 132 to 136. The cutouts 150 and 152 lie atthe places where the unexposed regions 138 and 140, respectively, wereoriginally situated. The exposed regions 132 to 136 remain unchangedduring the development.

As illustrated in FIG. 3C, the metal layer 104 is subsequently patternedusing an anisotropic etching process in accordance with the structurepresent in the adhesive layer 12. The cutouts 150 and 152 are extendedthrough the metal layer 104. At the end of the etching process, thebottom of the cutout 150 lies on the oxide layer 102. The bottom of thecutout 152 likewise lies on the bottom of the oxide layer 102. Metalinterconnects 160 to 164 are produced from the continuous metal layer104 during the patterning.

After the etching process, the residual residues 132 to 136 of theadhesive layer 12 are removed with the aid of a stripping adhesive tape,such as in the manner explained above with reference to FIG. 2B.

In another exemplary embodiment, an adhesive layer 12 which acts as apositive resist is likewise used for the method explained with referenceto FIGS. 3A to 3C. Reference is made to the explanations concerningFIGS. 2A and 2B in connection with a positive resist.

In one exemplary embodiment, the adhesive layer 12 includes a compoundhaving a low molecular weight that has at least two photo-polymerizablecarbon-carbon double bonds per molecule. The adhesive layer 12 may alsoinclude a photo-polymerization initiator. The photo-polymerizablecompound has a number average molecular weight of about 10,000 or less,preferably of 5000 or less. The number of photo-polymerizablecarbon-carbon double bonds per molecule should be 2 to 6, preferably 3to 6. The photo-polymerizable compounds may be, for example,trimethylol-propane triacrylate, pentaerythritol triacrylate,pentaerythritol tetraacrylate, dipentaerythritolmonohydroxypentaacrylate and dipentaerythritol hexa-acrylate. Otherphoto-polymerizable compounds which can be used include 1,4 butanedioldiacrylate, 1,6 hexane diol diacrylate, polyethylene glycol diacrylateand commercially available oligoester acrylate.

The photo-polymerizable compounds may be used singly or in combinations.The quantity in which the photo-polymerizable compound is used lies inthe range of 1 to 100 parts by weight relative to 100 parts by weight ofthe base polymer. If the quantity in which the photo-polymerizablecompound is used is too small, the three dimensional network structureis formed only inadequately in the event of irradiation of the pressuresensitive adhesive layer 12 with light and the decrease in the adhesionforce of the thin adhesive layer 12 at the integrated circuitarrangement 20 is too small. On the other hand, if their quantity is toolarge, the plasticity of the resulting pressure-sensitive adhesive layerincreases significantly and the original adhesive force risesexcessively. Examples of photo-polymerizable initiators are: isopropylbenzoin ether, isobutyl benzoin ether, benzophenone, Michler's ketone,chlorothioxanthone, dodecylthioxanthone, dime thylthioxanthone,diethylthioxanthone, acetophenone diethyl ketal, benzyl dimethyl ketal,α-hydroxyl-cyclohexyl phenyl ketone and 2-hydroxymethylphenyl propane.These compounds may be used singly or in combinations.

Use was made of a composition comprising 100 parts of butylacrylate, 5parts of acrylonitrile and 5 parts of acrylic acid for acopolymerization in toluene in order to prepare an acrylic copolymerhaving a number average molecular weight of 300,000. The following wereadded to 100 parts of the acrylic copolymer: 5 parts of a polyisocyanatecompound (trade name “Coronate L”, prepared by the company NipponPolyurethane Co. Ltd.), 15 parts of dipentaerythritolmonohydroxypentaacrylate and 1 part of a hydroxycyclo-hexyl phenylketone. These parts were mixed to produce the adhesive layer 12. Thecomposition was applied in the form of a layer to the surface of theouter layer 14 with a thickness D1 of 50 μm and then dried for a periodof time at an elevated temperature, such as for 3 minutes, at 130° C.

In another exemplary embodiment, an acrylic copolymer having a numberaverage molecular weight of 3000 or of 30,000 is prepared, to which theabovementioned parts are then added. Other known compositions can alsobe used instead of the compositions explained for the adhesive layer 12.In particular, a uniform thickness of the resist layer may be achievedby means of the methods specified above. Thickness tolerances of lessthan +/−3% may be achieved in a simple manner.

In specific wafer processing operations, the slice edge is not given aresist coating, in order to ensure the problem free transporting andintroduction of the wafers in machines or a current connection in agalvanic method. Removing the edge with a solvent that is only sprayedon at the edge would increase the resist thickness at the slice edge byup to 15 percent on account of unavoidable introduction of solvent alsointo the resist that is not to be removed.

Steps for additionally removing a peripheral edge region are avoided ifthe tape type or sheet type resist layer is prestamped (precut) to asize which is at least 2 mm or at least 5 mm smaller than the waferdiameter. A centering step is performed in this case. Such a centeringstep may be performed if films with the contour of the wafer are used.If a wafer flat is taken into account on the prestamped or preformedfilm, then the correct position of the flat region must also be takeninto consideration when applying the resist film.

However, unstamped tapes or sheets are also used, a matching resistpiece being cut out by means of a cutting edge after the application ofthe film, such as from a roll, along the wafer edge. Centeringoperations may be obviated in this case.

Tape lamination processes are additionally considerably quicker and lessexpensive than resist coating processes. The exposure can be performedby means of mask aligner systems. The antireflection properties of thefilms make it possible also to pattern metal interconnects overtopographies without constrictions.

A radiation-sensitive component, such as a UV-light-sensitive component(ultraviolet), in the resist and/or in the adhesive enables residue freeremoval from the slice surface, in particular without tears. If theresist cures further during the irradiation, then it becomes moreresistant to plasma attacks. The use of thermostable components in theresist makes it possible to further increase the plasma power during thepatterning of a layer lying below the resist.

It is therefore intended that the foregoing detailed description beregarded as illustrative rather than limiting, and that it be understoodthat it is the following claims, including all equivalents, that areintended to define the spirit and scope of this invention.

1. A method for the application of a resist layer, comprising: applyinga resist layer to a base layer; selectively irradiating the resistlayer; and developing the resist layer, wherein the resist layer isapplied to the base layer in the solid state; and wherein a matchingresist piece is cut out along an edge of a wafer after the applicationof the resist layer.
 2. The method of claim 1, further comprisingcovering the resist layer with a protective material before theapplication of the resist layer to the base layer, the protectivematerial preventing a curing of an adhesive associated with the resistlayer, and being removed before the application.
 3. The method of claim2, where the protective material is arranged at the resist layer.
 4. Themethod of claim 2, where the protective material is removed less than 10minutes before the application to the base layer.
 5. The method of claim2, wherein the base layer comprises a semiconductor substrate.
 6. Themethod of claim 2, comprising irradiating the resist layer with any oneof electromagnetic radiation, ultraviolet radiation, X ray radiation,particle radiation, electron radiation, and ion radiation.
 7. A methodfor patterning a resist layer, comprising: applying resist layer to abase layer; selectively irradiating the resist layer; and developing theresist layer; wherein the resist layer is bonded to the base layer inthe solid state and comprises an adhesive whose adhesive force changeswith respect to the adhesive force at the base area during theirradiation; and providing an antireflection layer with the resist layerbefore the application of the resist layer to the base layer, saidantireflection layer preventing a reflection of the radiation at theresist layer.
 8. The method of claim 7, wherein the adhesive forcedecreases by more than 30% during irradiation.
 9. The method of claim 8,wherein the adhesive force decreases by more than 90% duringirradiation.
 10. The method of claim 7, wherein the adhesive forceincreases by more than 50% during irradiation.
 11. The method of claim10, wherein the adhesive force increases by more than 100% duringirradiation.
 12. The method of claim 7, wherein remaining regions of theresist layer on the base layer after the development have a reducedadhesive force in comparison with the nonirradiated resist layer. 13.The method of claim 7, comprising stripping remaining regions of theresist layer on the base layer after the development with an adhesivearea having an adhesive force at the remaining regions being greaterthan the adhesive force of the remaining regions with respect to thebase layer.
 14. The method of claim 7, comprising removing remainingregions of the resist layer on the base layer after the development witha solvent.
 15. The method of claim 7, comprising using an organicsolvent as a developer.
 16. A method for patterning a resist layer,comprising: applying a resist layer to a base layer; selectivelyirradiating the resist layer; and developing the resist layer; whereinthe resist layer is bonded to the base layer in the solid state andcomprises an adhesive whose adhesive force changes with respect to theadhesive force at the base area during the irradiation comprising usingan organic solvent as a developer; and where the organic solventcomprises N methylpyrrolidone.
 17. A method for patterning a resistlater, comprising: applying a resist layer to a base layer; selectivelyirradiating the resist layer; and developing the resist layer; whereinthe resist layer is bonded to the base layer in the solid state andcomprises an adhesive whose adhesive force changes with respect to theadhesive force at the base area during the irradiation comprising usingan organic solvent as a developer; and where the organic solventcomprises dimethyl sulfoxide.
 18. The method of claim 7, comprisingapplying the resist layer using an auxiliary area that adheres to theresist layer with a smaller adhesive force than the adhesive force ofthe nonirradiated resist layer at the base layer.
 19. The method ofclaim 18, comprising applying the resist layer using an auxiliary tape.20. The method of claim 18, comprising applying the resist layer usingan auxiliary sheet.
 21. A method for the application of a resist layer,comprising: applying a resist layer to a base layer; selectivelyirradiating the resist layer; and developing the resist layer., whereinthe resist layer is applied to the base layer in the solid state; andwherein the resist layer is formed on a wafer and prestamped to a sizewhich is at least 2 mm smaller than a diameter of the wafer.
 22. Amethod for patterning a resist layer, comprising: applying a resistlayer to a base layer; selectively irradiating the resist layer; anddeveloping the resist layer; wherein the resist layer is bonded to thebase layer in the solid state and comprises an adhesive whose adhesiveforce changes with respect to the adhesive force at the base area duringthe irradiation; and providing an antireflection layer with the resistlayer before the application of the resist layer to the base layer, saidantireflection layer reducing a reflection of the radiation at theresist layer.
 23. The method of claim 7, comprising applying a resistlayer with a thickness of greater than 30 μm in an applicationoperation.
 24. The method of claim 23, comprising applying a resistlayer with a thickness of greater than 100 μm in an applicationoperation.
 25. The method of claim 7, comprising patterning the baselayer in accordance with the regions of the resist layer that remainafter the development.
 26. The method of claim 25, comprising patterningthe base layer in accordance with the regions of the resist layer thatremain after the development in an etching method.
 27. The method ofclaim 7, comprising applying material to uncovered regions of the baselayer that are arranged between remaining regions of the resist layerafter the development.
 28. The method of claim 27, comprising applyingmaterial to uncovered regions of the base layer that are arrangedbetween remaining regions of the resist layer after the development bymeans of any one of galvanic, chemical or chemical physical and physicalapplication.
 29. The method of claim 7, comprising doping the base layerselectively in accordance with the regions of the resist layer whichremain after the development.